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Sökning: LAR1:lu > Samuelson Lars

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  • Aberg, I, et al. (författare)
  • Nanoscale tungsten aerosol particles embedded in GaAs
  • 2002
  • Ingår i: Applied Physics Letters. - American Institute of Physics. - 0003-6951. ; 80:16, s. 2976-2978
  • Tidskriftsartikel (refereegranskat)abstract
    • GaAs containing buried nanoscale tungsten particles has been characterized electrically. The particles were produced using a special aerosol process and were embedded in GaAs by epitaxial overgrowth. Two different particle sizes were investigated separately. When the particle concentration was increased, a conductance drop of about 500 times was observed. A simulation model, based on a random distribution of the particles, was developed and used to support our findings. The major advantage of our method is the simplicity and low processing cost.
  • Adolfsson, Karl, et al. (författare)
  • Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications
  • 2013
  • Ingår i: Nano Letters. - The American Chemical Society. - 1530-6992. ; 13:10, s. 4728-4732
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanowires are increasingly used in biology, as sensors, as injection devices, and us model systems for toxicity studies. Currently, in situ visualization of nanowires in biological media is done using organic dyes, which a;:e prone to photobleaching, or using microscopy methods which either yield poor resolution or require a sophisticated setup. Here we show that inherently fluorescent nanowire axial heterostructnies c:an be used to localize and identify nanowires in cells and tissue; By synthesizing GaP GaInP nanowire heterostructures, with nonfluorescent GaP segments and fluorescent GaInP segments, we created a barcode labeling system enabling the distinction of the nanowire morphological and chemical properties using fluorescence microscopy. The GaInP photoluminescence stability, combined with the fact that the nanowires can be coated with different materials while retaining their fluorescence, make these nanowires promising tools for biological and nanotoxicological studies.
  • Aghaeipour, Mahtab, et al. (författare)
  • Tunable absorption resonances in the ultraviolet for InP nanowire arrays
  • 2014
  • Ingår i: Optics Express. - OSA. - 1094-4087. ; 22:23, s. 29204-29212
  • Tidskriftsartikel (refereegranskat)abstract
    • The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < lambda < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors. (C) 2014 Optical Society of America
  • Anttu, Nicklas, et al. (författare)
  • Absorption of light in InP nanowire arrays
  • 2014
  • Ingår i: Nano Reseach. - Springer. - 1998-0124. ; 7:6, s. 816-823
  • Tidskriftsartikel (refereegranskat)abstract
    • An understanding of the absorption of light is essential for efficient photovoltaic and photodetection applications with III-V nanowire arrays. Here, we correlate experiments with modeling and verify experimentally the predicted absorption of light in InP nanowire arrays for varying nanowire diameter and length. We find that 2,000 nm long nanowires in a pitch of 400 nm can absorb 94% of the incident light with energy above the band gap and, as a consequence, light which in a simple ray-optics description would be travelling between the nanowires can be efficiently absorbed by the nanowires. Our measurements demonstrate that the absorption for long nanowires is limited by insertion reflection losses when light is coupled from the air top-region into the array. These reflection losses can be reduced by introducing a smaller diameter to the nanowire-part closest to the air top-region. For nanowire arrays with such a nanowire morphology modulation, we find that the absorptance increases monotonously with increasing diameter of the rest of the nanowire.
  • Anttu, Nicklas, et al. (författare)
  • Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays
  • 2014
  • Ingår i: Nano Letters. - The American Chemical Society. - 1530-6992. ; 14:10, s. 5650-5655
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanostructures have many material, electronic, and optical properties that are not found in bulk systems and that are relevant for technological applications. For example, nanowires realized from III-V semiconductors can be grown into wurtzite crystal structure. This crystal structure does not naturally exist in bulk where these materials form the zinc-blende counterpart. Being able to concomitantly grow these nanowires in the zinc-blende and/or wurtzite crystal structure prlovides an important degree of control for the design and optimization of optoelectronic applications based on these semiconductor nanostructures. However, the refractive indices of this new crystallographic phase have so far not been elucidated. This shortcoming makes it impossible to predict and utilize he full potential of these new nanostructured materials for optoelectronics applications a careful design and optimization of optical resonances by tuning the nanostrucuted geometry is needed to achieve optimal performance. Here, we report and analyze striking differeences in the optical response of nanophotonic resonances in wurtzite and zinc-blend InAs nanowire arrays. Specifically, through reflectance measurements we find that the resonance can be tuned down to lambda approximate to 380 nm in wurtzite nanowires by decreasing the nanowire diameter. In stark contrast, a similar tuning to below approximate to 500 nm is not possible in the zinc-blende nanowires. Furthermore, we find that the wurtzite nanowires can absorb twice as strongly as the zinc-blende nanowires. We attribute these strikingly large differences in resonant behavior to large differences between the refractive indices of the two crystallographic phases realized in these nanostructures. We anticipate our finding to be relevant for other III-B materials as well as for all material systems that manifest polytypism. Taken together, our results demonstrate crystal phase engineering as a potentially new design dimension for optoelectronics applications.
  • Anttu, Nicklas, et al. (författare)
  • Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples.
  • 2013
  • Ingår i: Nano Letters. - The American Chemical Society. - 1530-6992. ; 13:6, s. 2662-2667
  • Tidskriftsartikel (refereegranskat)abstract
    • The physical, chemical, and biological properties of nanostructures depend strongly on their geometrical dimensions. Here we present a fast, noninvasive, simple-to-perform, purely optical method that is capable of characterizing nanostructure dimensions over large areas with an accuracy comparable to that of scanning electron microscopy. This far-field method is based on the analysis of unique fingerprints in experimentally measured reflectance spectra using full three-dimensional optical modeling. We demonstrate the strength of our method on large-area (millimeter-sized) arrays of vertical InP nanowires, for which we simultaneously determine the diameter and length as well as cross-sample morphological variations thereof. Explicitly, the diameter is determined with an accuracy better than 10 nm and the length with an accuracy better than 30 nm. The method is versatile and robust, and we believe that it will provide a powerful and standardized measurement technique for large-area nanostructure arrays suitable for both research and industrial applications.
  • Anttu, Nicklas, et al. (författare)
  • Reflection measurements to reveal the absorption in nanowire arrays
  • 2013
  • Ingår i: Optics Letters. - Optical Society of America. - 0146-9592. ; 38:9, s. 1449-1451
  • Tidskriftsartikel (refereegranskat)abstract
    • The absorption of light is at the core of photovoltaic applications. For many nanostructure-based devices, an assessment of the absorption in the nanostructures is complicated by a thick, opaque substrate that prohibits transmission measurements. Here, we show how a single reflection measurement can be used for approximating the amount of light absorbed in vertical semiconductor nanowire arrays. (C) 2013 Optical Society of America
  • Balocco, C, et al. (författare)
  • Microwave detection at 110 GHz by nanowires with broken symmetry
  • 2005
  • Ingår i: Nano Letters. - The American Chemical Society. - 1530-6992. ; 5:7, s. 1423-1427
  • Tidskriftsartikel (refereegranskat)abstract
    • By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect -25 dBm 110 GHz microwaves at zero bias with a standard setup.
  • Bao, Jiming, et al. (författare)
  • Nanowire-induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate
  • 2009
  • Ingår i: Advanced Materials. - John Wiley & Sons. - 1521-4095. ; 21:36, s. 3654-3654
  • Tidskriftsartikel (refereegranskat)abstract
    • InAs pyramids and platelets on a zinc-blende InAs substrate are found to exhibit a wurtzite crystal structure. induced by wurtzite InAs nanowires, wurtzite InAs thin film and its associated zinc-blende/wurtzite heterocrystalline heterostructures may open up new opportunities in band-gap engineering and related device applications.
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